MRF5S19100HR3 MRF5S19100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
?
Typical 2-Carrier N-CDMA Performance: VDD
= 28 Volts,
IDQ
= 1000 mA, P
out
= 22 Watts Avg., Full Frequency Band. IS-95 (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 13.9 dB
Drain Efficiency ? 25.5%
IM3 @ 2.5 MHz Offset ? -36.5 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset ? -50.7 dBc in 30 kHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
Lower Thermal Resistance Package
?
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
269
1.54
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW
Case Temperature 70°C, 22 W CW
RθJC
0.64
0.65
°C/W
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S19100H
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
MRF5S19100HR3
MRF5S19100HSR3
1930-1990 MHz, 22 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF5S19100HR3
CASE 465A-06, STYLE 1
NI-780S
MRF5S19100HSR3
?
Freescale Semiconductor, Inc., 2006. All rights reserved.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF5S19130HSR5
MOSFET RF N-CHAN 28V 26W NI-880S
MRF5S19150HSR5
MOSFET RF N-CHAN 28V 32W NI-880S
MRF5S21045MR1
MOSFET RF N-CH 28V 10W TO270-4
MRF5S21045NR1
MOSFET RF N-CH 28V 10W TO270-4
MRF5S21090HSR5
MOSFET RF N-CHAN 28V 19W NI-780S
MRF5S21100HSR5
MOSFET RF N-CHAN 28V 23W NI-780S
MRF5S21130HSR5
MOSFET RF N-CHAN 28V 28W NI-880S
MRF5S4125NR1
MOSFET RF SGL 450MHZ TO-270-4
相关代理商/技术参数
MRF5S19130HR3
功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19130HR3_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF5S19130HR5
功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19130HSR3
功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19130HSR5
功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19130R3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19130SR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19150
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors